Room-temperature 1.6 μm electroluminescence from p+-Si/β-FeSi2/n+-Si diodes on Si(001) without high-temperature annealing

被引：9
|
作者：
Koizumi, Tomoaki [1 ]
Murase, Shigemitsu [1 ]
Suzuno, Mitsushi [1 ]
Suemasu, Takashi [1 ]
机构：
[1] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan
来源：
APPLIED PHYSICS EXPRESS | 2008年 / 1卷 / 05期
关键词：
D O I：
10.1143/APEX.1.051405
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have epitaxially grown p(+)-Si/beta-FeSi2(8 nm)/n(+)-Si (SFS) light-emitting diodes (LEDs) on Si(001) substrates by molecular-beam epitaxy (MBE) using Ga-doped p(+)-Si layers (p similar to 10(19) cm(-3)). 1.6 mu m electroluminescence (EL) was realized at room temperature (RT) for the first time for the SFS LEDs prepared without high-temperature annealing. (c) 2008 The Japan Society of Applied Physics.
引用
收藏
页码：0514051 / 0514053
页数：3
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