Effects of Buffer Layer on Structure and Ferromagnetism of Co-Doped SnO2 Films

被引:0
作者
Liu, X. F. [1 ]
Yu, R. H. [1 ]
Jiang, H. [2 ]
Yang, B. [1 ]
He, B. [3 ]
机构
[1] Beihang Univ, Sch Mat Sci & Engn, Beijing 100191, Peoples R China
[2] Tsinghua Univ, Dept Mat Sci & Engn, Beijing 100084, Peoples R China
[3] Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230029, Peoples R China
关键词
Diluted magnetic oxide; buffer layer; lattice strain; structural defects; MAGNETIC-PROPERTIES; THIN-FILMS; ZNO FILMS; THICKNESS; STRAIN;
D O I
10.1109/TMAG.2011.2158078
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The thickness of SnO2 buffer layers has been found to considerably affect the structure and magnetic properties of Sn1-xCoxO2 films. As the buffer-layer thickness increases, the lattice constant and Co-O bond length of the Sn1-xCoxO2 films contract, which suggest the gradual relaxation of the accumulated tensile strain. Simultaneously, the amount of structural defects in Sn1-xCoxO2 films decreases significantly and the grain size increases with increasing buffer-layer thickness. All the Sn1-xCoxO2 films exhibit intrinsic ferromagnetism at room temperature and the saturated magnetic moment varies with the buffer-layer thickness. The dependence of ferromagnetism on the buffer-layer thickness can be explained on the basis of the variations in the density of structural defects and Co-O bond length in Sn1-xCoxO2 films.
引用
收藏
页码:3999 / 4002
页数:4
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