Parameterization of CuIn1-xGaxSe2 (x=0, 0.5, and 1) energy bands

被引:5
作者
Chen, Rongzhen [1 ]
Persson, Clas [1 ]
机构
[1] Royal Inst Technol, Dept Mat Sci & Engn, SE-10044 Stockholm, Sweden
基金
瑞典研究理事会;
关键词
CuInSe2; CuGaSe2; Chalcopyrite; Solar cells; Band structure; Electronic structure; Effective mass;
D O I
10.1016/j.tsf.2010.12.216
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Parameterization of the electronic band structure of CuIn1-xGaxSe2 (x=0, 0.5, and 1) demonstrates that the energy dispersions of the three uppermost valence bands [E-j(k); j=v1, v2, and v3] are strongly anisotropic and non-parabolic even very close to the Gamma-point valence-band maximum E,(0). Also the lowest conduction band E-c1 (k) is anisotropic and non-parabolic for energies similar to 0.05 eV above the band-gap energy. Since the electrical conductivity depends directly on the energy dispersion, future electron and hole transport simulations of CuIn1-xGaxSe2 need to go beyond the parabolic approximation of the bands. We therefore present a parameterization of the energy bands, the k-dependency of the effective electron and hole masses m(f)(k), and also an average energy-dependent approximation of the masses m(j)(E). (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码:7503 / 7507
页数:5
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