Gas cluster ion beams for wafer processing

被引:7
作者
Mack, ME [1 ]
机构
[1] Ep Corp, Billerica, MA 01821 USA
关键词
cluster ion beams; GCIB; equipment for GCIB;
D O I
10.1016/j.nimb.2004.12.139
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Gas cluster ion beams (GCIB) represent a powerful new tool for wafer processing. This paper will review the development status of GOB equipment as pertains to semiconductor applications. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:235 / 239
页数:5
相关论文
共 8 条
  • [1] ALLEN LP, 2002, INT SOI C WILL VA OC
  • [2] Bachand J, 2003, IIT2002: ION IMPLANTATION TECHNOLOGY, PROCEEDINGS, P669
  • [3] BORLAND J, 2004, SOLID STATE TECHNOLO
  • [4] BORLAND JO, NUCL INSTR METH B
  • [5] KIRKPATRICK A, NUCL INSTR METH B
  • [6] Mack ME, 2003, IIT2002: ION IMPLANTATION TECHNOLOGY, PROCEEDINGS, P665
  • [7] TOYODA N, 1997, IMPLANTATION TECHNOL, V96, P808
  • [8] Weldon J., 2004, 5 WORKSH CLUST ION B