High voltage and large current dynamic test of SiC diodes and hybrid module

被引：0

作者：

Liu, Ao ^{[1
]}

Chen, Gang ^{[1
,2
]}

Bai, Song ^{[1
,2
]}

Huang, Run Hua ^{[1
]}

Tao, Yong Hong ^{[1
]}

Wang, Ling ^{[1
]}

机构：

[1] Nanjing Elect Device Inst, Nanjing 210016, Jiangsu, Peoples R China

[2] Sci & Technol Monolith Integrated Circuits & Modu, Nanjing 210016, Jiangsu, Peoples R China

来源：

PROCEEDINGS OF THE 2015 6TH INTERNATIONAL CONFERENCE ON MANUFACTURING SCIENCE AND ENGINEERING | 2016年 / 32卷

关键词：

dynamic test; double-pulse; SiC diodes and modules;

D O I：

暂无

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

High voltage and large current dynamic test for SiC diodes and hybrid module was studied. Then high voltage dynamic test for 1700V-25A 4H-SiC junction barrier schottky (JBS) diodes and high current dynamic test for a 1700V-200A half-brige SiC hybrid module were performed. With the change of test conditions, such as driving resistance and load inductance, dynamic parameters have some variation. The reverse recovery time of SiC diode and swich on/off time of SiC hybrid module under test is between 20ns to 200ns. The test got a high accuracy. These devices are very suitable for high frequency applications.

引用

页码：1425 / 1430

页数：6

共 50 条

[41] Dynamic Characteristics of Large Current Capacity Module using 16-kV Ultrahigh Voltage SiC Flip-Type n-channel IE-IGBT
Mizushima, Tomonori
Takenaka, Kensuke
Fujisawa, Hiroyuki
Kato, Tomohisa
Harada, Shinsuke
Tanaka, Yasunori
Okamoto, Mitsuo
Sometani, Mitsuru
Okamoto, Dai
Kumagai, Naoki
Matsunaga, Shinichiro
Deguchi, Tadayoshi
Arai, Manabu
Hatakeyama, Tetsuo
Makifuchi, Youichi
Araoka, Tsuyoshi
Oose, Naoyuki
Tsutsumi, Takashi
Yoshikawa, Mitsuru
Tatera, Katsumi
Tanaka, Atsushi
Ogata, Syuji
Nakayama, Koji
Hayashi, Toshihiko
Asano, Katsunori
Harashima, Masayuki
Sano, Yukio
Morisaki, Eisuke
Takei, Manabu
Miyajima, Masaaki
Kimura, Hiroshi
Otsuki, Akihiro
Yonezawa, Yoshiyuki
Fukuda, Kenji
Okumura, Hajime
Kimoto, Tsunenobu
2014 IEEE 26TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & IC'S (ISPSD), 2014, : 277 - 280
[42] Study of SiC PiN diodes subjected to high current density pulses
Hillkirk, LM
Bakowski, M
SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 1269 - 1272
[43] Origin of leakage current in SiC Schottky barrier diodes at high temperature
Saitoh, HS
Kimoto, T
Matsunami, H
SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2, 2004, 457-460 : 997 - 1000
[44] Study of SiC PiN diodes subjected to high current density pulses
(Trans Tech Publications Ltd): : 389 - 393
[45] Reliability Aspects of High Voltage 4H-SiC JBS Diodes
Brosselard, Pierre
Camara, Nicolas
Jorda, Xavier
Vellvehi, Miquel
Bano, Edwige
Millan, Jose
Godignon, Philippe
SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 2009, 600-603 : 935 - +
[46] Material quality improvements for high voltage 4H-SiC diodes
Kalinina, E
Kossov, V
Shchukarev, A
Bratus, V
Pensl, G
Rendakova, S
Dmitriev, V
Hallen, A
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2001, 80 (1-3): : 337 - 341
[47] High Voltage SiC Schottky Diodes in Rectifiers for X-ray Generators
Luerkens, P.
Guimaraes, P.
Godignon, P.
Millan, J.
SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 2012, 717-720 : 1245 - +
[48] High-current, high-voltage AlN Schottky barrier diodes
Quinones, C. E.
Khachariya, D.
Reddy, P.
Mita, S.
Almeter, J.
Bagheri, P.
Rathkanthiwar, S.
Kirste, R.
Pavlidis, S.
Kohn, E.
Collazo, R.
Sitar, Z.
APPLIED PHYSICS EXPRESS, 2024, 17 (10)
[49] The current status and future prospects of SiC high voltage technology
Mihaila, A.
Knoll, L.
Bianda, E.
Bellini, M.
Wirths, S.
Alfieri, G.
Kranz, L.
Canales, F.
Rahimo, M.
2018 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2018,
[50] Modeling Current Voltage Characteristics of MWIR HgCdTe Diodes at High Reverse Bias Voltage
Srivastav, Vanya
Saini, Navneet Kaur
Sareen, L.
Bhan, R. K.
Sharma, R. K.
PHYSICS OF SEMICONDUCTOR DEVICES, 2014, : 881 - 883

← 1 2 3 4 5 →