High voltage and large current dynamic test of SiC diodes and hybrid module

被引：0
|
作者：
Liu, Ao [1 ]
Chen, Gang [1 ,2 ]
Bai, Song [1 ,2 ]
Huang, Run Hua [1 ]
Tao, Yong Hong [1 ]
Wang, Ling [1 ]
机构：
[1] Nanjing Elect Device Inst, Nanjing 210016, Jiangsu, Peoples R China
[2] Sci & Technol Monolith Integrated Circuits & Modu, Nanjing 210016, Jiangsu, Peoples R China
来源：
PROCEEDINGS OF THE 2015 6TH INTERNATIONAL CONFERENCE ON MANUFACTURING SCIENCE AND ENGINEERING | 2016年 / 32卷
关键词：
dynamic test; double-pulse; SiC diodes and modules;
D O I：
暂无
中图分类号：
TP [自动化技术、计算机技术];
学科分类号：
0812 ;
摘要：
High voltage and large current dynamic test for SiC diodes and hybrid module was studied. Then high voltage dynamic test for 1700V-25A 4H-SiC junction barrier schottky (JBS) diodes and high current dynamic test for a 1700V-200A half-brige SiC hybrid module were performed. With the change of test conditions, such as driving resistance and load inductance, dynamic parameters have some variation. The reverse recovery time of SiC diode and swich on/off time of SiC hybrid module under test is between 20ns to 200ns. The test got a high accuracy. These devices are very suitable for high frequency applications.
引用
收藏
页码：1425 / 1430
页数：6
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