Influence of defect type on hydrogen passivation efficacy in multicrystalline silicon solar cells

被引：33

作者：

Bertoni, M. I. ^{[1
]}

Hudelson, S. ^{[1
]}

Newman, B. K. ^{[1
]}

Fenning, D. P. ^{[1
]}

Dekkers, H. F. W. ^{[2
]}

Cornagliotti, E. ^{[2
]}

Zuschlag, A. ^{[3
]}

Micard, G. ^{[3
]}

Hahn, G. ^{[3
]}

Coletti, G. ^{[4
]}

Lai, B. ^{[5
]}

Buonassisi, T. ^{[1
]}

机构：

[1] MIT, Cambridge, MA 02139 USA

[2] IMEC VZW, B-3001 Leuven, Belgium

[3] Univ Konstanz, Dept Phys, D-78457 Constance, Germany

[4] ECN Solar Energy, NL-1755 LE Petten, Netherlands

[5] Argonne Natl Lab, Adv Photon Source, Argonne, IL 60439 USA

来源：

PROGRESS IN PHOTOVOLTAICS | 2011年 / 19卷 / 02期

基金：

美国国家科学基金会;

关键词：

hydrogen passivation; defects; dislocations; iron; multicrystalline silicon; BEAM-INDUCED CURRENT; GRAIN-BOUNDARIES; RECOMBINATION; CHARACTER;

D O I：

10.1002/pip.1008

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

We examine the effectiveness of hydrogen passivation as a function of defect type and microstructure at grain boundaries (GBs) in multicrystalline silicon. We analyze a solar cell with alternating mm-wide bare and SiNx-coated stripes using laser-beam-induced current, electron backscatter diffraction, X-ray fluorescence microscopy, and defect etching to correlate pre- and post-hydrogenation recombination activity with GB character, density of iron-silicide nanoprecipitates, and dislocations. A strong correlation was found between GB recombination activity and the nature/density of etch pits along the boundaries, while iron silicide precipitates above detection limits were found to play a less significant role. Copyright (C) 2010 John Wiley & Sons, Ltd.

引用

页码：187 / 191

页数：5

共 27 条

[1] STRUCTURAL AND PHOTOELECTRICAL PROPERTIES OF A 3RD-ORDER TWIN BOUNDARY (SIGMA = 27) IN SILICON [J].