Optical spectra in the region of exciton resonances in quantum wells and quantum dots of In0.3Ga0.7As/GaAs heterostructures

被引：2

作者：

Syrbu, N. N. ^{[1
]}

Dorogan, V. ^{[1
]}

Dorogan, A. ^{[1
]}

Vieru, T. ^{[1
]}

Ursaki, V. V. ^{[2
]}

Zalamai, V. V. ^{[2
]}

机构：

[1] Tech Univ Moldova, Kishinev 2004, Moldova

[2] Moldavian Acad Sci, Inst Appl Phys, Kishinev 2028, Moldova

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2012年 / 52卷 / 04期

基金：

瑞士国家科学基金会;

关键词：

Heterostructures; Quantum wells; Quantum dots; Reflection; Absorption; Luminescence; Excitons; Optical functions; MOLECULAR-BEAM-EPITAXY; PHOTOLUMINESCENCE; EMISSION; GAAS; THRESHOLD; ISLANDS; GROWTH; ARRAYS; MBE;

D O I：

10.1016/j.spmi.2012.06.022

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The transparency, reflection and luminescence spectra of In0.3Ga0.7As structures with 8 nm thickness and quantum wells limited by the barrier layer GaAs of a 9 nm (upper layer) and 100 nm (bottom layer) thickness had been studied in the region of photon energy 0.5-1.6 eV. Lines associated with the transitions hh,lh1-e1(1s,2s,3s), hh2,lh2-e2(1s,2s,3s), hh1,lh1-e2(1s) and hh3,lh3-e3(1s) had been revealed in reflection spectra. The shapes of the reflection and transparency lines had been calculated using a single oscillator model of dispersion relations and the Kramers-Kronig integrals. The binding energy of hh,lh1-e1 excitons, the effective mass m(hh)* and m(lh)* and the damping factor for the optical transitions to QW and QD had been determined. The lifetime of charge carriers on quantum dots varies in the range of 0.04-0.1 ps, while the radiative lifetime of excitons in quantum wells in the considered structure is around 2 ps. (C) 2012 Elsevier Ltd. All rights reserved.

引用

页码：738 / 749

页数：12

共 30 条

[1] PHOTOLUMINESCENCE AND PHOTOCONDUCTIVITY MEASUREMENTS ON BAND-EDGE OFFSETS IN STRAINED MOLECULAR-BEAM-EPITAXY-GROWN INX GA1-XAS/GAAS QUANTUM WELLS [J].