Optimization of electrical and optical properties of ITO thin films by annealing in air and nitrogen

This paper will investigation the optimization of ITO thin films by various thin films deposited time with annealing under air and nitrogen environment. ITO will use for transparent electrode of photodetector that require high transparent and low resistivity. Thin films prepare by using RF sputtering technique by various sputter times 5, 15, 30 and 60 mins then annealing under air and nitrogen for 10 mins, 300?degrees C. Transparent of thin films after prepared at thickness around 1,166?mu m and annealing under nitrogen environment show high transparent 89.8% at wavelength 1,170?nm and low resistivity 2.1?x?10(-5)?ohm-cm. From the results of transparent and resistivity will get optimize thickness of thin films that use for transparent electrode of photodetector. By optimize thickness of ITO thin films is 413?nm with 87.6% transparent and 0.8?x?10(-3)?ohm-cm resistivity. Copyright (C) 2022 Elsevier Ltd. All rights reserved. Selection and peer-review under responsibility of the scientific committee of the Joint International Con-ference on Applied Physics and Materials Applications & Applied Magnetism and Ferroelectrics.