Biexciton and exciton dynamics in single InGaN quantum dots

被引：28

作者：

Rice, JH

Robinson, JW

Na, JH

Lee, KH

Taylor, RA

Williams, DP

O'Reilly, EP

Andreev, AD

Arakawa, Y

Yasin, S

机构：

[1] Univ Oxford, Dept Phys, Oxford OX1 3PU, England

[2] Univ Coll Cork, NMRC, Cork, Ireland

[3] Univ Surrey, Dept Phys, Surrey GU2 7XH, England

[4] Univ Tokyo, Res Ctr Adv Sci & Technol, Meguro Ku, Tokyo 1530041, Japan

[5] Univ Cambridge, Ctr Microelect Res, Cambridge CB3 0HE, England

来源：

NANOTECHNOLOGY | 2005年 / 16卷 / 09期

关键词：

D O I：

10.1088/0957-4484/16/9/010

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Time-resolved and time-integrated microphotoluminescence spectrometry of exciton and biexciton transitions in a single self-assembled InGaN quantum dot gives sharp peaks, with the biexciton 41 meV higher in energy. Theoretical modelling in the Hartree approximation (using a self-consistent finite difference method) predicts a splitting of up to 51 meV. Time-resolved microphotoluminescence measurements yield a radiative recombination lifetime of 1.0 +/- 0.1 ns for the exciton and 1.4 +/- 0.1 ns for the biexciton. The data can be fitted to a coupled DE rate equation model, confirming that the exciton state is refilled as biexcitons undergo radiative decay.

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收藏

页码：1477 / 1481

页数：5

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