A New Method of Accurately Measuring Photoconductive Performance of 4H-SiC Photoconductive Switches

被引：17

作者：

Han, Wei-Wei ^{[1
,2
]}

Huang, Wei ^{[1
]}

Zhuo, Shi-Yi ^{[1
]}

Xin, Jun ^{[1
]}

Liu, Xue-Chao ^{[1
]}

Shi, Er-Wei ^{[1
]}

Zhang, Yue-Fan ^{[3
]}

Cao, Peng-Hui ^{[3
]}

Wang, Yu-Tian ^{[3
]}

Guo, Hui ^{[3
]}

Zhang, Yu-Ming ^{[3
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 201800, Peoples R China

[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China

[3] Xidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond Mat & Devices, Xian 710071, Shaanxi, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2019年 / 40卷 / 02期

基金：

国家重点研发计划;

关键词：

Photoconductive switch; silicon carbide; intrinsic photoconductivity; pulse-power system switches; on-state resistance;

D O I：

10.1109/LED.2018.2885787

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new method of accurately measuring the photoconductive performance of photoconductive semiconductor switch (PCSS) was proposed. By this method, we succeeded extracting the photoconductivity of 4H-SiC substrate free from the obstruction of parasitic inductance in the test circuit. Photoconductive performance of the PCSS was precisely measured, where a maximum ON-state photoconductivity of 6.26 (Omega . m)(-1), a minimum ON-state resistivity of 0.16 Omega.m, and an accurate minimum resistance of 1.71 Omega were obtained for SiC substrate. The quantitative relationship between the ON-state resistance and the reciprocal of area of laser trigger region was proved. The performance of PCSSs can be continuously adjusted to adapt different application requirements just by changing the area of laser excitation region.

引用

页码：271 / 274

页数：4

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