Hot Carrier-Assisted Intrinsic Photoresponse in Graphene

被引：857

作者：

Gabor, Nathaniel M. ^{[1
]}

Song, Justin C. W. ^{[1
,2
]}

Ma, Qiong ^{[1
]}

Nair, Nityan L. ^{[1
]}

Taychatanapat, Thiti ^{[1
,3
]}

Watanabe, Kenji ^{[4
]}

Taniguchi, Takashi ^{[4
]}

Levitov, Leonid S. ^{[1
]}

Jarillo-Herrero, Pablo ^{[1
]}

机构：

[1] MIT, Dept Phys, Cambridge, MA 02139 USA

[2] Harvard Univ, Harvard Sch Engn & Appl Sci, Cambridge, MA 02138 USA

[3] Harvard Univ, Dept Phys, Cambridge, MA 02138 USA

[4] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050044, Japan

来源：

SCIENCE | 2011年 / 334卷 / 6056期

基金：

美国国家科学基金会;

关键词：

PHOTODETECTORS; GENERATION;

D O I：

10.1126/science.1211384

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

We report on the intrinsic optoelectronic response of high-quality dual-gated monolayer and bilayer graphene p-n junction devices. Local laser excitation (of wavelength 850 nanometers) at the p-n interface leads to striking six-fold photovoltage patterns as a function of bottom-and top-gate voltages. These patterns, together with the measured spatial and density dependence of the photoresponse, provide strong evidence that nonlocal hot carrier transport, rather than the photovoltaic effect, dominates the intrinsic photoresponse in graphene. This regime, which features a long-lived and spatially distributed hot carrier population, may offer a path to hot carrier-assisted thermoelectric technologies for efficient solar energy harvesting.

引用

页码：648 / 652

页数：5

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