In(Ga)As/GaAs(001) quantum dot molecules probed by nanofocus high resolution x-ray diffraction with 100 nm resolution

被引：9

作者：

Dubslaff, M. ^{[1
]}

Hanke, M. ^{[1
]}

Burghammer, M. ^{[2
]}

Schoeder, S. ^{[2
]}

Hoppe, R. ^{[3
]}

Schroer, C. G. ^{[3
]}

Mazur, Yu. I. ^{[4
]}

Wang, Zh. M. ^{[4
]}

Lee, J. H. ^{[4
,5
]}

Salamo, G. J. ^{[4
]}

机构：

[1] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany

[2] European Synchrotron Radiat Facil, F-38043 Grenoble, France

[3] Tech Univ Dresden, Inst Strukturphys, D-01069 Dresden, Germany

[4] Univ Arkansas, Dept Phys, Fayetteville, AR 72701 USA

[5] Kwangwoon Univ, Sch Elect & Informat, Seoul 139701, South Korea

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 21期

关键词：

D O I：

10.1063/1.3593960

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In(Ga)As quantum dots, which laterally self-assemble into quantum dot molecules, have been studied by scanning x-ray nanodiffraction, finite element calculations and subsequent kinematical diffraction simulations. X-ray beam sizes of 100 nm enable small scattering volumes comparable to the object size at extremely high local flux densities (approximate to 10(4) photons nm(-2) s(-1)). By that bulk contributions to the scattering are effectively reduced. Area maps of various individual quantum dot molecules have been measured, whereas the diffraction patterns therein reveal spatially resolved information about the inter quantum dot position correlation function. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3593960]

引用

页数：3

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