Polarization-Insensitive Optical Modulator Based on Single-Layer Graphene Sheets

被引:1
作者
Andrade, Braian N. O. [1 ]
Carvalho, William O. F. [1 ]
Beltran-Mejia, Felipe [2 ]
Mejia-Salazar, J. R. [1 ]
机构
[1] Natl Inst Telecommun, BR-37540000 Santa Rita Do Sapucai, MG, Brazil
[2] PadTec, Parque II Polo Alta Tecnol,Rua Dr Ricardo Benetto, BR-13086902 Campinas, SP, Brazil
关键词
Amplitude and phase modulation; electro-optic modulator; graphene; polarization-insensitive; silicon waveguide; NEXT-GENERATION; SILICON; PHOTONICS; DEPOSITION;
D O I
10.1109/TNANO.2021.3132308
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report the design of a highly efficient, compact and ultra-broadband hybrid graphene-silicon modulator. The design comprises a single graphene layer deposited on a siliconwaveguide, using a thin hafnium dioxide dielectric spacer. The light-graphene interaction was tuned, by parametric optimization, in order to provide polarization-insensitive modulation. The simulation results indicate polarization-insensitive modulation in amplitude and phase, with a speed of 11.63 GHz, within the entire optical communications range. The energy per bit (E-bit) was also calculated for both modulation mechanisms, indicating a way to optimize the energy consumption according to the desired application. Significantly, we demonstrated efficient modulation with an energy consumption lower than 1 pJ/bit for both amplitude and phase modulation mechanisms. We expect that the fabrication of the proposed device helps to pave the way for ultra-broadband optical interconnects that can cope with the growing demand for higher capacity and bandwidth in optical communications.
引用
收藏
页码:883 / 888
页数:6
相关论文
共 53 条
[1]   Integrating photonics with silicon nanoelectronics for the next generation of systems on a chip [J].
Atabaki, Amir H. ;
Moazeni, Sajjad ;
Pavanello, Fabio ;
Gevorgyan, Hayk ;
Notaros, Jelena ;
Alloatti, Luca ;
Wade, Mark T. ;
Sun, Chen ;
Kruger, Seth A. ;
Meng, Huaiyu ;
Al Qubaisi, Kenaish ;
Wang, Imbert ;
Zhang, Bohan ;
Khilo, Anatol ;
Baiocco, Christopher V. ;
Popovic, Milos A. ;
Stojanovic, Vladimir M. ;
Ram, Rajeev J. .
NATURE, 2018, 556 (7701) :349-+
[2]   Graphene Photonics, Plasmonics, and Broadband Optoelectronic Devices [J].
Bao, Qiaoliang ;
Loh, Kian Ping .
ACS NANO, 2012, 6 (05) :3677-3694
[3]   Low-power thermo-optic silicon modulator for large-scale photonic integrated systems [J].
Chung, Sungwon ;
Nakai, Makoto ;
Hashemi, Hossein .
OPTICS EXPRESS, 2019, 27 (09) :13430-13459
[4]   Graphene Based Waveguide Polarizers: In-Depth Physical Analysis and Relevant Parameters [J].
de Oliveira, Rafael E. P. ;
de Matos, Christiano J. S. .
SCIENTIFIC REPORTS, 2015, 5
[5]   Are There Fundamental Limitations on the Sheet Resistance and Transmittance of Thin Graphene Films? [J].
De, Sukanta ;
Coleman, Jonathan N. .
ACS NANO, 2010, 4 (05) :2713-2720
[6]   Hybrid graphene/silicon Schottky photodiode with intrinsic gating effect [J].
Di Bartolomeo, Antonio ;
Luongo, Giuseppe ;
Giubileo, Filippo ;
Funicello, Nicola ;
Niu, Gang ;
Schroeder, Thomas ;
Lisker, Marco ;
Lupina, Grzegorz .
2D MATERIALS, 2017, 4 (02)
[7]   Theoretical investigation of graphene-based photonic modulators [J].
Gosciniak, Jacek ;
Tan, Dawn T. H. .
SCIENTIFIC REPORTS, 2013, 3
[8]  
Grigorenko AN, 2012, NAT PHOTONICS, V6, P749, DOI [10.1038/NPHOTON.2012.262, 10.1038/nphoton.2012.262]
[9]   Ultrathin HfO2 films grown on silicon by atomic layer deposition for advanced gate dielectrics applications [J].
Gusev, EP ;
Cabral, C ;
Copel, M ;
D'Emic, C ;
Gribelyuk, M .
MICROELECTRONIC ENGINEERING, 2003, 69 (2-4) :145-151
[10]   Ultra-compact optical modulator by graphene induced electro-refraction effect [J].
Hao, Ran ;
Du, Wei ;
Chen, Hongsheng ;
Jin, Xiaofeng ;
Yang, Longzhi ;
Li, Erping .
APPLIED PHYSICS LETTERS, 2013, 103 (06)