Directly Modulated Semiconductor Lasers

被引：64
作者：
Zhu, Ning Hua [1 ,2 ]
Shi, Zhan [1 ,2 ]
Zhang, Zhi Ke [1 ,2 ]
Zhang, Yi Ming [1 ,2 ]
Zou, Can Wen [1 ,2 ]
Zhao, Ze Ping [1 ,2 ]
Liu, Yu [1 ,2 ]
Li, Wei [1 ,2 ]
Li, Ming [1 ,2 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100864, Peoples R China
[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
来源：
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2018年 / 24卷 / 01期
基金：
中国国家自然科学基金;
关键词：
Semiconductor lasers; directly modulated lasers; microwave photonics; EQUIVALENT-CIRCUIT MODEL; HIGH-SPEED MODULATION; FREQUENCY BANDWIDTH ESTIMATION; BURIED HETEROSTRUCTURE LASER; ERROR-FREE TRANSMISSION; FABRY-PEROT LASER; TWIN-GUIDE LASERS; DFB-LASER; 10; GBIT/S; AMPLITUDE-MODULATION;
D O I：
10.1109/JSTQE.2017.2720959
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents a review and discussion of the directly modulated semiconductor lasers and their applications to optical communications and microwave photonics. A detailed and comprehensive demonstration of directly modulated semiconductor lasers from development history to specific techniques on measurement, analysis, and packaging is provided for the first time to the best of our knowledge. A few typical applications based on directly modulated lasers are also illustrated, such as optical fiber communications, free-space optical communications and microwave photonics. Future directions of research are also highlighted.
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页数：19
相关论文
共 199 条
  • [1] 40 GHz hybrid modelocked laser diode module operated at ultra-low RF power with impedance-matching circuit
    Arahira, S
    Mineo, N
    Tachibana, K
    Ogawa, Y
    [J]. ELECTRONICS LETTERS, 2003, 39 (03) : 287 - 289
  • [2] Baney D., 1994, P TECH DIG OPT AMPL
  • [3] TRAVELING-WAVE ELECTRO-OPTIC MODULATOR WITH MAXIMUM BANDWIDTH-LENGTH PRODUCT
    BECKER, RA
    [J]. APPLIED PHYSICS LETTERS, 1984, 45 (11) : 1168 - 1170
  • [4] Oxide-confined 850 nm VCSELs operating at bit rates up to 40 Gbit/s
    Blokhin, S. A.
    Lott, J. A.
    Mutig, A.
    Fiol, G.
    Ledentsov, N. N.
    Maximov, M. V.
    Nadtochiy, A. M.
    Shchukin, V. A.
    Bimberg, D.
    [J]. ELECTRONICS LETTERS, 2009, 45 (10) : 501 - 502
  • [5] HIGH-SPEED SEMICONDUCTOR-LASER DESIGN AND PERFORMANCE
    BOWERS, JE
    [J]. SOLID-STATE ELECTRONICS, 1987, 30 (01) : 1 - 11
  • [6] HIGH-SPEED, POLYIMIDE-BASED SEMIINSULATING PLANAR BURIED HETEROSTRUCTURES
    BOWERS, JE
    KOREN, U
    MILLER, BI
    SOCCOLICH, C
    JAN, WY
    [J]. ELECTRONICS LETTERS, 1987, 23 (24) : 1263 - 1265
  • [7] Low-phase-noise millimeter-wave generation at 64 GHz and data transmission using optical sideband injection locking
    Braun, RP
    Grooskopf, G
    Rohde, D
    Schmidt, F
    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1998, 10 (05) : 728 - 730
  • [8] Wide-bandwidth millimeter-wave bond-wire interconnects
    Budka, TP
    [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2001, 49 (04) : 715 - 718
  • [9] Extraction of DFB laser rate equation parameters for system simulation purposes
    Cartledge, JC
    Srinivasan, RC
    [J]. JOURNAL OF LIGHTWAVE TECHNOLOGY, 1997, 15 (05) : 852 - 860
  • [10] High-efficiency, high-speed VCSELs with 35Gbit/s error-free operation
    Chang, Y.-C.
    Wang, C. S.
    Coldren, L. A.
    [J]. ELECTRONICS LETTERS, 2007, 43 (19) : 1022 - 1024
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