Full C-band tunable high fibre output power electroabsorption modulator integrated with semiconductor optical amplifier

被引：13

作者：

Choi, W ^{[1
]}

Frateschi, N ^{[1
]}

Zhang, I ^{[1
]}

Gebretsadik, H ^{[1
]}

Jambunathan, R ^{[1
]}

Bond, AE ^{[1
]}

Van Norman, J ^{[1
]}

Vandegrift, D ^{[1
]}

Wanarnaker, C ^{[1
]}

机构：

[1] T Networks Inc, Allentown, PA 18106 USA

来源：

ELECTRONICS LETTERS | 2003年 / 39卷 / 17期

关键词：

D O I：

10.1049/el:20030801

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The 10 Gbit/s high power output InGaAsP multiple-quantum well electmabsorption modulator, which can be tunable in the full C-band, is demonstrated. The semiconductor optical amplifier is integrated to compensate for optical losses.. Operation over the full C-band, which ranges from 1530 to 1565 nm, is obtained using temperature and bias tuning. Under these operating conditions, modulated fibre output power as high as +4 dBm, dynamic extinction ratio exceeding 8.5 dB, and dispersion penalty of less than 2 dB for 1600 ps/nm of fibre, are achieved across the entire band.

引用

页码：1271 / 1272

页数：2

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