Reliability of high-frequency operation of low-temperature polysilicon thin film transistors under dynamic stress

被引：33

作者：

Uraoka, Y

Hatayama, T

Fuyuki, T

Kawamura, T

Tsuchihashi, Y

机构：

[1] Nara Inst Sci & Technol, Grad Sch Mat Sci, Nara 6300101, Japan

[2] Matsushita Elect Ind Co Ltd, LCD Div, Nomi, Ishikawa 9231296, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2000年 / 39卷 / 12A期

关键词：

low temperature poly-Si; TFT; reliability; hot carrier; LDD; photon emission;

D O I：

10.1143/JJAP.39.L1209

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The reliability of low-temperature poly-Si under dynamic stress was evaluated. A decrease in the mobility and the ON current was observed under the dynamic stress. We found that the degradation depends strongly on falling time and frequency. Based on these findings, degradation was found to be induced by high electric field during pulse fall duration. This degradation is dominated by hot electrons and can be improved by adopting a lightly doped drain (LDD) structure.

引用

页码：L1209 / L1212

页数：4