Dual-Band Microwave Power Amplifier Design Using GaN Transistors

被引：0

作者：

Shao, Jin ^{[1
]}

Poe, David ^{[1
]}

Ren, Han ^{[1
]}

Arigong, Bayaner ^{[1
]}

Zhou, Mi ^{[1
]}

Ding, Jun ^{[1
]}

Zhou, Rongguo ^{[1
]}

Kim, Hyoung Soo ^{[1
]}

Zhang, Hualiang ^{[1
]}

机构：

[1] Univ N Texas, Dept Elect Engn, Denton, TX 76201 USA

来源：

2014 IEEE 57TH INTERNATIONAL MIDWEST SYMPOSIUM ON CIRCUITS AND SYSTEMS (MWSCAS) | 2014年

关键词：

dual-band; microwave power amplifier; GaN; Doherty power amplifier;

D O I：

暂无

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

This paper presents the design and the applications of dual-band microwave power amplifiers using GaN transistors. First, a dual-band power amplifier using dual-band transmission line (TL) impedance matching networks, which can simultaneously match two different complex impedances to 50 Omega at two uncorrelated frequencies, is introduced. Secondly, design of a dual-band GaN based Doherty power amplifier (DPA) is presented in this paper. The dual-band DPA is based on a simplified DPA structure and wideband matching networks. The simplified DPA structure eliminates the 35 Omega quarter wavelength impedance inverters used in the conventional DPAs by matching the output impedances of the carrier and peak amplifiers of the DPA to other values (e.g. 100 Omega).

引用

页码：559 / 562

页数：4

共 6 条

[1] Design of Highly Efficient Broadband Class-E Power Amplifier Using Synthesized Low-Pass Matching Networks [J].