Phosphonic acid self-assembled monolayer improved the properties of n-type organic field-effect transistors in air ambient

被引：6

作者：

Cao, Li ^{[1
]}

Peng, Yue ^{[1
]}

Li, Zhefeng ^{[1
]}

机构：

[1] Chongqing Univ, Coll Chem & Chem Engn, Chongqing 400044, Peoples R China

来源：

RSC ADVANCES | 2016年 / 6卷 / 92期

关键词：

THIN-FILM TRANSISTORS; NAPHTHALENE-DIIMIDE; DEVICE PERFORMANCE; HIGH-MOBILITY; CHANNEL; SEMICONDUCTORS; MORPHOLOGY; VOLTAGE; STABILITY; SURFACE;

D O I：

10.1039/c6ra17255e

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Here we report an approach to surface modification of the SiO2 gate dielectric on a Si device based on a simple procedure in which a dilute solution of a phosphonic acid is drawn down across the surface of the Si substrate. A crystalline thin film of NDI-C14 was successfully grown by vapor deposition on the surface of SAM modified dielectrics and obtained improved electron mobility up to 4.23 x 10(-2) cm(2) V-1 s(-1) at room temperature in air ambient. Three SAM (ODPA, TDPA, and NAPA) modified dielectrics increased the electron mobility of the NDI-C14 by three orders of magnitude compared to that on bare SiO2. The improvement of electron mobility is associated with the close packing arrangement of NDI-C14 film on different SAMs.

引用

页码：89794 / 89798

页数：5

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