Anomalous structural distortion - a possible origin for the waking-up of the spontaneous polarization in ferroelectric HfO2

被引:5
作者
Nittayakasetwat, Siri [1 ]
Kita, Koji [1 ]
机构
[1] Univ Tokyo, Grad Sch Engn, Dept Mat Engn, Bunkyo Ku, 7-3-1 Hongo, Tokyo 1138656, Japan
关键词
HfO2; Ferroelectric; Structural Analysis; Structural Distortion; Phase Transformation; Waking-up;
D O I
10.35848/1347-4065/ac085c
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report that the waking-up of the spontaneous polarization (P (spon)) in ferroelectric (FE) HfO2 is related to the phase transformation driven by electric field cycling. We found an anomalous distortion, which is defined by the difference between in-plane and out-of-plane interplanar spacing induced in FE-HfO2 thin films. We further investigated and found that there is a relationship between the amount of the P (spon) that was woken up and the amount of distortion. Due to the distinctiveness of an electric field-driven phase transformation, we propose a concept of distortion as a possible origin that determines the waking-up of the P (spon) in FE-HfO2.
引用
收藏
页数:4
相关论文
共 24 条
  • [1] Structural and dielectric properties of amorphous ZrO2 and HfO2
    Ceresoli, Davide
    Vanderbilt, David
    [J]. PHYSICAL REVIEW B, 2006, 74 (12):
  • [2] Phase-Exchange-Driven Wake-Up and Fatigue in Ferroelectric Hafnium Zirconium Oxide Films
    Fields, Shelby S.
    Smith, Sean W.
    Ryan, Philip J.
    Jaszewski, Samantha T.
    Brummel, Ian A.
    Salanova, Alejandro
    Esteves, Giovanni
    Wolfley, Steve L.
    Henry, M. David
    Davids, Paul S.
    Ihlefeld, Jon F.
    [J]. ACS APPLIED MATERIALS & INTERFACES, 2020, 12 (23) : 26577 - 26585
  • [3] Atomic Structure of Domain and Interphase Boundaries in Ferroelectric HfO2
    Grimley, Everett D.
    Schenk, Tony
    Mikolajick, Thomas
    Schroeder, Uwe
    LeBeau, James M.
    [J]. ADVANCED MATERIALS INTERFACES, 2018, 5 (05):
  • [4] Structural Changes Underlying Field-Cycling Phenomena in Ferroelectric HfO2 Thin Films
    Grimley, Everett D.
    Schenk, Tony
    Sang, Xiahan
    Pesic, Milan
    Schroeder, Uwe
    Mikolajick, Thomas
    LeBeau, James M.
    [J]. ADVANCED ELECTRONIC MATERIALS, 2016, 2 (09):
  • [5] Stabilizing the ferroelectric phase in doped hafnium oxide
    Hoffmann, M.
    Schroeder, U.
    Schenk, T.
    Shimizu, T.
    Funakubo, H.
    Sakata, O.
    Pohl, D.
    Drescher, M.
    Adelmann, C.
    Materlik, R.
    Kersch, A.
    Mikolajick, T.
    [J]. JOURNAL OF APPLIED PHYSICS, 2015, 118 (07)
  • [6] Pathways towards ferroelectricity in hafnia
    Huan, Tran Doan
    Sharma, Vinit
    Rossetti, George A., Jr.
    Ramprasad, Rampi
    [J]. PHYSICAL REVIEW B, 2014, 90 (06)
  • [7] Inaba K., 2008, The Rigaku Journal, V24, P10
  • [8] Large ferroelectric polarization of TiN/Hf0.5Zr0.5O2 capacitors due to stress-induced crystallization at low budget
    Kim, Si Joon
    Narayan, Dushyant
    Lee, Jae-Gil
    Mohan, Jaidah
    Lee, Joy S.
    Lee, Jaebeom
    Kim, Harrison S.
    Byun, Young-Chul
    Lucero, Antonio T.
    Young, Chadwin D.
    Summerfelt, Scott R.
    San, Tamer
    Colombo, Luigi
    Kim, Jiyoung
    [J]. APPLIED PHYSICS LETTERS, 2017, 111 (24)
  • [9] Local crystallographic phase detection and texture mapping in ferroelectric Zr doped HfO2 films by transmission-EBSD
    Lederer, M.
    Kaempfe, T.
    Olivo, R.
    Lehninger, D.
    Mart, C.
    Kirbach, S.
    Ali, T.
    Polakowski, P.
    Roy, L.
    Seidel, K.
    [J]. APPLIED PHYSICS LETTERS, 2019, 115 (22)
  • [10] Relative stability of ZrO2 and HfO2 structural phases
    Lowther, JE
    Dewhurst, JK
    Leger, JM
    Haines, J
    [J]. PHYSICAL REVIEW B, 1999, 60 (21) : 14485 - 14488