CAPACITANCE ANALYSIS OF THE PURE MANGANESE OXIDE IN COMPARISON WITH THE DOPED MANGANESE OXIDE THIN FILMS FABRICATED USING LOW COST TECHNIQUE

Aim: The intent of this project is to evaluate the capacitance of the Pure Manganese oxide thin film in comparison with the Cobalt doped and Nickel doped Manganese oxide thin films. Cobalt and Nickel are used as dopants to enhance the performance of Manganese oxide when integrating these films in the supercapacitor with an innovative dip coating technique. Materials and Methods: The pure Manganese oxide and doped Manganese oxide thin films were fabricated using the innovative dip coating technique. The thin films were fabricated on a glass microslide of thickness 1.1mm. A study was done on the capacitance and the quality factor of the pure and doped Manganese oxide thin films using LCR meter. The sample size of Pure Manganese oxide, Cobalt doped Manganese oxide and Nickel doped Manganese oxide thin films were 211 each with a total sample size of 422. The calculation was done using the clincalc sample size calculator with a pretest power of 80 % with an error correction of 0.05. Results and Discussion: The capacitance of Pure Manganese oxide is reduced by doping it with Cobalt and Nickel. The mean capacitance of pure Manganese oxide is 129.8321 F and reduced to 117.9717 F for Cobalt doped Manganese oxide and 141.9559 F for Nickel doped Manganese oxide. Conclusion: The result of the study shows that the Nickel doped Manganese oxide thin film appears to produce the most consistent result and the pure Manganese oxide thin film appears to produce the most variable result. The significance of Pure Manganese oxide, Cobalt doped and Nickel doped Manganese oxide is 0.016, 0.002, 0.001 respectively and the p value is taken to be <0.05, which is also evident in the SPSS result. The Nickel doped Manganese oxide is significantly better than the pure Manganese oxide and Cobalt doped Manganese oxide.