Beryllium-Assisted p-Type Doping for ZnO Homojunction Light-Emitting Devices

被引：54

作者：

Chen, Anqi ^{[1
]}

Zhu, Hai ^{[1
]}

Wu, Yanyan ^{[1
]}

Chen, Mingming ^{[2
]}

Zhu, Yuan ^{[1
]}

Gui, Xuchun ^{[1
]}

Tang, Zikang ^{[1
,3
]}

机构：

[1] Sun Yat Sen Univ, Sch Phys & Enineering, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China

[2] Jiangsu Univ, Fac Sci, Nanjing 212013, Jiangsu, Peoples R China

[3] Univ Macau, Inst Appl Phys & Mat Engn, Ave Univ, Taipa, Macau, Peoples R China

来源：

ADVANCED FUNCTIONAL MATERIALS | 2016年 / 26卷 / 21期

基金：

中国国家自然科学基金;

关键词：

MOLECULAR-BEAM EPITAXY; ACCEPTOR PAIR LUMINESCENCE; NITROGEN ACCEPTORS; BLUE-LIGHT; FILMS; PHOTOLUMINESCENCE; DIODES; GROWTH; ENERGY; ACTIVATION;

D O I：

10.1002/adfm.201600163

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A key step in realization of a ZnO homojunction light-emitting diode is the effective p-type doping in ZnO:N. In this article, a feasible route is demonstrated to enhance hole doping in ZnO:N films by the assistance of Beryllium. The newly synthesized p-type ZnO is applied in light-emitting devices. The corresponding p-i-n junction exhibits excellent diode characteristics, and strong near band edge ultraviolet emissions is also observed even at temperatures as high as 400 K under the injection of continuous current. The results represent a critical advance toward the development of high-efficiency and stabilized p-type ZnO, which is also a desirable key step for future ZnO-based optoelectronic applications.

引用

页码：3696 / 3702

页数：7

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