Computational study for growth of GaN on graphite as 3D growth on 2D material

被引：22
|
作者：
Ishii, Akira [1 ]
Tatani, Takaaki [1 ]
Asano, Hiroki [1 ]
Nakada, Kengo [1 ]
机构：
[1] Tottori Univ, Dept Appl Math & Phys, Tottori 680, Japan
来源：
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 2 | 2010年 / 7卷 / 02期
关键词：
D O I：
10.1002/pssc.200982430
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The density functional calculation is performed to determine the structure of the grown GaN film on graphite for comparison with experimental results using pulsed laser deposition method. The predicted result for polarity of the grown GaN is (000 (1) under bar) and it agrees with experiment. Since GaN is grown well on graphite, graphite is considered to be an ideal lattice mismatch free substrate for heteroepitaxial growth. [GRAPHICS] (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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收藏
页码：347 / 350
页数：4
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