Effect of Fe doping on the crystallization and electrical properties of Na0.5Bi0.5TiO3 thin film

被引：23
作者：
Feng, C. [1 ]
Yang, C. H. [1 ,2 ]
Sui, H. T. [1 ]
Geng, F. J. [1 ]
Han, Y. J. [1 ]
机构：
[1] Univ Jinan, Sch Mat Sci & Engn, Jinan 250022, Peoples R China
[2] Univ Jinan, Shandong Prov Key Lab Preparat & Measurement Bldg, Jinan 250022, Peoples R China
来源：
CERAMICS INTERNATIONAL | 2015年 / 41卷 / 03期
基金：
中国国家自然科学基金;
关键词：
Film; Dielectric properties; Ferroelectric properties; Crystallization; PIEZOELECTRIC PROPERTIES; BIFEO3; FILMS;
D O I：
10.1016/j.ceramint.2014.10.066
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Na0.5Bi0.5Ti1-xFexO3-delta (abbreviated as NBTFex, x=0.005, 0.01, 0.02 and 0.04) thin films were deposited on indium tin oxide/glass substrates via a chemical solution deposition method. The influence of Fe2+ doping on the crystallization and electrical properties of Na0.5Bi0.5TiO3 was investigated. All the films crystallize into the single perovskite structure without any secondary phases. The insulating measurement reveals that 2 at% Fe2+ doping can effectively reduce the leakage current of Na0.5Bi0.5TiO3 thin film by the formation of defect complexes. The enhanced ferroelectricity is obtained in NBTFe0.02 with a large remanent polarization (P-r) of 20 mu C/cm(2) due to the lowest leakage current and the distortion of TiO6. The normalized capacitance voltage curves of all films agree with the polarization-electric field hysteresis loops. Also, the relative dielectric constant and dissipation factor of NBTFe0.02 thin film are 450 and 0.094 at 100 kHz, respectively. (C) 2014 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
引用
收藏
页码：4214 / 4217
页数：4
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