Blue-violet PL band formation in C:SiO2 films after swift heavy ion irradiation

被引：7

作者：

Wang, ZG ^{[1
]}

Jin, YF ^{[1
]}

Xie, EQ ^{[1
]}

Liu, J ^{[1
]}

Zhu, ZY ^{[1
]}

Sun, YM ^{[1
]}

Hou, MD ^{[1
]}

Zhang, QX ^{[1
]}

Chen, XX ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2003年 / 209卷

关键词：

swift heavy ions; electronic energy loss; photoluminescence; C-doped SiO2 films; light-emitting materials;

D O I：

10.1016/S0168-583X(02)02029-3

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

One hundred and twenty keV Gion doped SiO2 films were irradiated at RT with swift Ar, Kr, Xe or U ions and their photoluminescence (PL) properties were examined. From the obtained results, we found that an intense blue-violet PL band centred at similar to435 +/- 10 nm was formed in all ion irradiated samples and a weak ultraviolet PL band centred at similar to380 nm was formed only in the samples after Kr, Xe or U ion irradiations. The PL peak intensity of the blue-violet band (i) increases with the increase of the swift heavy ion irradiation fluence, (ii) decreases with the increase of electronic energy loss S-e when S-e < 4.85 keV/nm but increases for S-e > 4.85 keV/nm. Furthermore, the peak central position of the blue-violet PL is shifted slightly to violet with increasing S, and some substructures appeared in the PL spectra of the samples irradiated with Xe or U ions. The appearance of these substructures is due to the high electronic energy loss. For the violet PL band, the intensity increases with S-c. Possible origins and formation mechanism of light-emitters corresponding to the observed PL bands are discussed. (C) 2002 Elsevier B.V. All rights reserved.

引用

页码：200 / 204

页数：5

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