Influence of X-ray Irradiation on Optical Parameters of (Ga0.2In0.8)2Se3 Films

被引：0

作者：

Studenyak, Ihor ^{[1
]}

Kranjcec, Mladen ^{[2
]}

Pop, Mykhaylo ^{[1
]}

Solomon, Andriy ^{[3
]}

Suslikov, Leonid ^{[1
]}

机构：

[1] Uzhgorod Natl Univ, Fac Phys, Uzhgorod, Ukraine

[2] Univ North, Varazhdin, Croatia

[3] NASU, Statute Inst Electron Phys, Dept Mat Funct Elect, Uzhgorod, Ukraine

来源：

PROCEEDINGS OF THE 2020 IEEE 10TH INTERNATIONAL CONFERENCE ON NANOMATERIALS: APPLICATIONS & PROPERTIES (NAP-2020) | 2020年

关键词：

thin film; spectral ellipsometry; transmission spectra; X-ray irradiation; refractive index; energy pseudogap; ABSORPTION EDGE; THIN-FILMS; CONSTANTS; DISORDER;

D O I：

暂无

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

(Ga0.2In0.8)(2)Se-3 films were deposited by the thermal evaporation technique. As-deposited thin films were irradiated using wideband radiation of Cu-anode X-ray tube at different exposition times. The spectral dependences of refractive index and extinction coefficient were measured by the spectral ellipsometry technique. The optical transmission spectra of X-ray irradiated (Ga0.2In0.8)(2)Se-3 films were studied depending on irradiation time. Parameters of Urbach absorption edge for X-ray irradiated (Ga0.2In0.8)(2)Se-3 films were determined. The nonlinear decrease of energy pseudogap as well as nonlinear increase of Urbach energy and refractive index with increase of X-ray irradiation time are revealed. The spectral dependences of refractive indices of non-irradiated and X-ray irradiated (Ga0.2In0.8)(2)Se-3 films are described by different dispersion relations.

引用

页数：4

共 25 条

[1] DISORDER AND THE OPTICAL-ABSORPTION EDGE OF HYDROGENATED AMORPHOUS-SILICON [J].