Through-wafer electrical interconnects by sidewall photolithographic patterning

被引：0

作者：

Liu, C ^{[1
]}

机构：

[1] Univ Illinois, Microelect Lab, Urbana, IL 61801 USA

来源：

WHERE INSTRUMENTATION IS GOING - CONFERENCE PROCEEDINGS, VOLS 1 AND 2 | 1998年

关键词：

D O I：

暂无

中图分类号：

TP39 [计算机的应用];

学科分类号：

081203 ; 0835 ;

摘要：

This paper describes a new photolithography technique for patterning vertical surfaces using 45-degree reflective mirrors. The resolution is limited by diffraction and by surface scattering. Using this techniques, novel through-wafer interconnects have been demonstrated with high wiring density. At 320 nm wavelength, 50 mu m-wide vertical lines have been fabricated with 25 mu m line-width loss.

引用

页码：1402 / 1405

页数：4