Temperature dependent characteristics of nonreach-through 4H-SiC separate absorption and multiplication APDs for UV detection

被引：41

作者：

Cha, Ho-Young ^{[1
]}

Soloviev, Stanislav ^{[2
]}

Zelakiewicz, Scott ^{[2
]}

Waldralb, Peter ^{[3
]}

Sandvik, Peter M. ^{[2
]}

机构：

[1] Hongik Univ, Sch Elect & Elect Engn, Seoul 121791, South Korea

[2] GE Global Res, Niskayuna, NY 12309 USA

[3] Alcan Technol Ctr, Williamsport, PA 17701 USA

来源：

IEEE SENSORS JOURNAL | 2008年 / 8卷 / 3-4期

关键词：

avalanche photodiode; separate absorption multiplication (SAM); silicon carbide; UV;

D O I：

10.1109/JSEN.2007.913033

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Silicon carbide (SiC) separate absorption multiplication region avalanche photodiodes (SAM-APDs) for UV detection in harsh environment applications were designed and fabricated. The devices were intentionally designed to operate under nonreach-through conditions in order to eliminate field-induced leakage current. The gain of 2500 and quantum efficiency of similar to 45% at room temperature were achieved at the wavelength of 290-300 turn for a packaged device with an active area of 1 x 1 mm(2). The temperature dependency of the current-voltage characteristics and responsivity was examined in the temperature range front room temperature to 230 degrees C.

引用

页码：233 / 237

页数：5

共 11 条

[1] SILICON-CARBIDE UV PHOTODIODES [J].

BROWN, DM ;

DOWNEY, ET ;

GHEZZO, M ;

KRETCHMER, JW ;

SAIA, RJ ;

LIU, YS ;

EDMOND, JA ;

GATI, G ;

PIMBLEY, JM ;

SCHNEIDER, WE .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (02) :325-333

[2] GaN avalanche photodiodes [J].

Carrano, JC ;

Lambert, DJH ;

Eiting, CJ ;

Collins, CJ ;

Li, T ;

Wang, S ;

Yang, B ;

Beck, AL ;

Dupuis, RD ;

Campbell, JC .

APPLIED PHYSICS LETTERS, 2000, 76 (07) :924-926

[3]

Cha HY, 2006, IEEE SENSOR, P14

[4] Performance of low-dark-current 4H-SiC avalanche photodiodes with thin multiplication layer [J].

Guo, Xiangyi ;

Beck, Ariane L. ;

Huang, Zhihong ;

Duan, Ning ;

Campbell, Joe C. ;

Emerson, David ;

Sumakeris, Joseph J. .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2006, 53 (09) :2259-2265

[5] Study of reverse dark current in 4H-SiC avalanche photodiodes [J].

Guo, XY ;

Beck, AL ;

Li, XW ;

Campbell, JC ;

Emerson, D ;

Sumakeris, J .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 2005, 41 (04) :562-567

[6] Nonlocal effects in thin 4H-SiC UV avalanche photodiodes [J].

Ng, BK ;

David, JPR ;

Tozer, RC ;

Rees, GJ ;

Yan, F ;

Zhao, JH ;

Weiner, M .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2003, 50 (08) :1724-1732

[7] Temperature dependence of hole impact ionization coefficients in 4H and 6H-SiC [J].

Raghunathan, R ;

Baliga, BJ .

SOLID-STATE ELECTRONICS, 1999, 43 (02) :199-211

[8] Progress in cold-wall epitaxy for 4H-SiC high-power devices [J].

Rowland, L. B. ;

Dunne, G. T. ;

Fronheiser, J. ;

Soloviev, S. .

SILICON CARBIDE AND RELATED MATERIALS 2006, 2007, 556-557 :141-+

[9]

SZE SM, 1981, PHYSICS SEMICONDUCTO, P766

[10]

VASSILEVSKI K, 2005, INT J HIGH SPEED ELE, V15, P899

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