High-magnetic field annealing effect on room-temperature ferromagnetism enhancement of un-doped HfO2 thin films

被引：2

作者：

Xie, Qian ^{[1
]}

Wang, Weipeng ^{[1
]}

Xie, Zheng ^{[1
,2
]}

Ning, Shuai ^{[1
]}

Li, Zhengcao ^{[1
]}

Zhang, Zhengjun ^{[3
]}

机构：

[1] Tsinghua Univ, Sch Mat Sci & Engn, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China

[2] Hitech Inst Xian, Xian 710025, Peoples R China

[3] Tsinghua Univ, Sch Mat Sci & Engn, Key Lab Adv Mat, MOE, Beijing 100084, Peoples R China

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2015年 / 119卷 / 03期

关键词：

DEFECTS;

D O I：

10.1007/s00339-015-9040-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Monoclinic HfO2 thin films with intrinsic defects were prepared by annealing in flowing argon. The behavior of the HfO2 films could be manipulated by applying an external magnetic field during annealing processing. Room-temperature ferromagnetism and visible photoluminescence were observed in these un-doped HfO2 films due to the involvement of oxygen vacancies. The results demonstrated that the density of oxygen vacancies in HfO2 films could be controlled by varying the intensity of the magnetic field. This study could facilitate understanding of ferromagnetism origin in un-doped oxides, also suggests an effective way to alter the intrinsic defects in HfO2 to improve its performance.

引用

页码：917 / 921

页数：5

共 36 条

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