Phase equilibria in the Ga2O3-In2O3 system

Subsolidus phase relationships in the Ga2O3-In2O3 system were studied by X-ray diffraction and electron probe microanalysis (EPMA) for the temperature range of 800 degrees-1400 degrees. The solubility limit of In2O3 in the beta-gallia structure decreases with increasing temperature from 44.1 +/- 0.5 mol% at 1000 degrees C to 41.4 +/- 0.5 mol% at 1400 degrees C. The solubility limit of Ga2O3 in cubic In2O3 increases with temperature from 4.8 +/- 0.5 mol% at 1000 degrees C to 10.0 +/- 0.5 mol% at 1400 degrees C. The previously reported transparent conducting oxide phase in the Ga-In-O system cannot be GaInO3, which is not stable, but is likely the In-doped beta-Ga2O3 solid solution.