Influence of Inhomogeneous Broadening on the Dynamics of Quantum Dot Lasers

被引：2
作者：
Wang, C. [1 ,2 ]
Gioannini, M. [3 ]
Montrosset, I. [3 ]
Even, J. [1 ]
Grillot, F. [2 ]
机构：
[1] Univ Europeenne Bretagne, NSA, CNRS FOTON, F-35708 Rennes 7, France
[2] Ecole Natl Super Telecommun Bretagne, Telecom Paristech, CNRS LTCI, F-75013 Paris, France
[3] Politecn Torino, Dipartimento Elettron & Telecomunicaz, I-10129 Turin, Italy
来源：
PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES XXIII | 2015年 / 9357卷
关键词：
semiconductor laser; quantum dot; inhomogeneous broadening; modulation dynamics; CARRIER RELAXATION; DIFFERENTIAL GAIN; 1ST DEMONSTRATION; ROOM-TEMPERATURE; MODULATION; LAYER; INDEX;
D O I：
10.1117/12.2079844
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This work theoretically studies the impacts of the inhomogeneous broadening on the modulation dynamics of quantum dot lasers using a multi-population rate equation model. The modulation dynamics shows two distinct regimes depending on the energy separation between the GS and the ES. For broadenings smaller than the GS-ES separation, the K-factor increases while the damping factor offset, the differential gain and the gain compression factor decrease with the inhomogeneous broadening. For broadenings larger than the GS-ES separation, the damping factor offset keeps almost constant while the K-factor, the differential gain and the gain compression factor increases with the inhomogeneous broadening.
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页数：8
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共 26 条
  • [1] Exploitation of optical interconnects in future server architectures
    Benner, AF
    Ignatowski, M
    Kash, JA
    Kuchta, DM
    Ritter, MB
    [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 2005, 49 (4-5) : 755 - 775
  • [2] High-speed modulation and switching characteristics of In(Ga)As-Al(Ga)As self-organized quantum-dot lasers
    Bhattacharya, P
    Klotzkin, D
    Qasaimeh, O
    Zhou, WD
    Krishna, S
    Zhu, DH
    [J]. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2000, 6 (03) : 426 - 438
  • [3] Spectral and dynamic properties of InAs-GaAs self-organized quantum-dot lasers
    Bhattacharyya, D
    Avrutin, EA
    Bryce, AC
    Marsh, JH
    Bimberg, D
    Heinrichsdorff, F
    Ustinov, VM
    Zaitsev, SV
    Ledentsov, NN
    Kop'ev, PS
    Alferov, ZI
    Onischenko, AI
    O'Reilly, EP
    [J]. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1999, 5 (03) : 648 - 657
  • [4] Coldren L. A., 1995, DIODE LASERS PHOTONI
  • [5] Electronic and optical properties of InAs/InP quantum dots on InP(100) and InP(311)B substrates:: Theory and experiment
    Cornet, C.
    Schliwa, A.
    Even, J.
    Dore, F.
    Celebi, C.
    Letoublon, A.
    Mace, E.
    Paranthoen, C.
    Simon, A.
    Koenraad, P. M.
    Bertru, N.
    Bimberg, D.
    Loualiche, S.
    [J]. PHYSICAL REVIEW B, 2006, 74 (03)
  • [6] Quantitative investigations of optical absorption in InAs/InP (311)B quantum dots emitting at 1.55 μm wavelength
    Cornet, C
    Labbé, C
    Folliot, H
    Bertru, N
    Dehaese, O
    Even, J
    Le Corre, A
    Paranthoen, C
    Platz, C
    Loualiche, S
    [J]. APPLIED PHYSICS LETTERS, 2004, 85 (23) : 5685 - 5687
  • [7] The impact of energy band diagram and inhomogeneous broadening on the optical differential gain in nanostructure lasers
    Dery, H
    Eisenstein, G
    [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 2005, 41 (01) : 26 - 35
  • [8] Simulations of differential gain and linewidth enhancement factor of quantum dot semiconductor lasers
    Gioannini, M
    Sevega, A
    Montrosset, I
    [J]. OPTICAL AND QUANTUM ELECTRONICS, 2006, 38 (4-6) : 381 - 394
  • [9] Numerical analysis of the frequency chirp in quantum-dot semiconductor lasers
    Gioannini, Mariangela
    Montrosset, Ivo
    [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 2007, 43 (9-10) : 941 - 949
  • [10] Effects of Homogeneous and Inhomogeneous Broadening on the Dynamics of Tunneling Injection Quantum Dot Lasers
    Gready, David
    Eisenstein, Gadi
    [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 2011, 47 (07) : 944 - 949
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