Visible photoluminescence from porous poly-Si/Si and amorphous-Si/Si structures

被引：0
作者：
Kim, MG [1 ]
Yun, Z
Lyou, J
Cho, S
Park, YJ
Kim, EK
机构：
[1] Korea Univ, Sch Nat Sci, Chungnam 339800, South Korea
[2] Korea Inst Sci & Technol, Semicond Mat Res Ctr, Seoul 130650, South Korea
[3] Shilla Univ, Dept Optoelect, Pusan 617736, South Korea
来源：
JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2001年 / 38卷 / 06期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We performed visible photoluminescence and scanning electron micrograph measurements on several porous poly-Si/Si and a-Si/Si structures. We found that the porous interfacial layer between the thin film and the substrate determined the optoelectronic properties for the structures. With the results, we present a model for porous structures based on the quantum confinement effect in silicon wires; the decreasing emission intensity and the redshift of photoluminescence originate from the silicon wires in the porous interface formed during all electrochemical process.
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页码：750 / 753
页数：4
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