Scaling at the metal-insulator transition in two dimensions

被引：19

作者：

Abrahams, E ^{[1
]}

机构：

[1] Rutgers State Univ, Serin Phys Lab, Piscataway, NJ 08854 USA

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 1998年 / 3卷 / 1-3期

基金：

美国国家科学基金会;

关键词：

metal-insulator transition; two-dimensional electron gas;

D O I：

10.1016/S1386-9477(98)00220-3

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The recently discovered two-dimensional metal-insulator transition will be reviewed and discussed in the light of the scaling theory of localization. It will be shown that an observed symmetry relating conductivity and resistivity follows directly from the critical behavior associated with such a transition. The status of both Fermi-liquid and non-Fermi-liquid approaches will be discussed. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：69 / 78

页数：10

共 34 条

[11] Metal-insulator transition at B=0 in p-type SiGe [J].

Coleridge, PT ;

Williams, RL ;

Feng, Y ;

Zawadzki, P .

PHYSICAL REVIEW B, 1997, 56 (20) :12764-12767

[12] Scaling theory of two-dimensional metal-insulator transitions [J].

Dobrosavljevic, V ;

Abrahams, E ;

Miranda, E ;

Chakravarty, S .

PHYSICAL REVIEW LETTERS, 1997, 79 (03) :455-458

[13] NON-METALLIC CONDUCTION IN THIN METAL-FILMS AT LOW-TEMPERATURES [J].

DOLAN, GJ ;

OSHEROFF, DD .

PHYSICAL REVIEW LETTERS, 1979, 43 (10) :721-724

[14]

EFETOV KB, 1980, ZH EKSP TEOR FIZ+, V78, P2017

[15] WEAK LOCALIZATION AND COULOMB INTERACTION IN DISORDERED-SYSTEMS [J].

FINKELSTEIN, AM .

ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, 1984, 56 (03) :189-196

[16]

Finkelstein AM, 1990, SOV SCI REV A, V14, P3

[17] ANDERSON LOCALIZATION AND INTERACTIONS IN ONE-DIMENSIONAL METALS [J].

GIAMARCHI, T ;

SCHULZ, HJ .

PHYSICAL REVIEW B, 1988, 37 (01) :325-340

[18]

GORKOV LP, 1973, JETP LETT+, V18, P68

[19]

GORKOV LP, 1979, JETP LETT+, V30, P228

[20] The metalliclike conductivity of a two-dimensional hole system [J].

Hanein, Y ;

Meirav, U ;

Shahar, D ;

Li, CC ;

Tsui, DC ;

Shtrikman, H .

PHYSICAL REVIEW LETTERS, 1998, 80 (06) :1288-1291

← 1 2 3 4 →