Automatic parameter selection for electron ptychography via Bayesian optimization

被引:10
作者
Cao, Michael C. [1 ]
Chen, Zhen [2 ]
Jiang, Yi [3 ]
Han, Yimo [1 ]
机构
[1] Rice Univ, Dept Mat Sci & NanoEngn, Houston, TX 77005 USA
[2] Tsinghua Univ, Sch Mat Sci & Engn, Beijing 100084, Peoples R China
[3] Argonne Natl Lab, Adv Photon Source, Lemont, IL 60439 USA
关键词
RESOLUTION; DIFFRACTION; MICROSCOPY; DETECTOR; DAMAGE;
D O I
10.1038/s41598-022-16041-5
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Electron ptychography provides new opportunities to resolve atomic structures with deep sub-angstrom spatial resolution and to study electron-beam sensitive materials with high dose efficiency. In practice, obtaining accurate ptychography images requires simultaneously optimizing multiple parameters that are often selected based on trial-and-error, resulting in low-throughput experiments and preventing wider adoption. Here, we develop an automatic parameter selection framework to circumvent this problem using Bayesian optimization with Gaussian processes. With minimal prior knowledge, the workflow efficiently produces ptychographic reconstructions that are superior to those processed by experienced experts. The method also facilitates better experimental designs by exploring optimized experimental parameters from simulated data.
引用
收藏
页数:10
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