A 1100+ V AlGaN/GaN-Based Planar Schottky Barrier Diode without Edge Termination

被引：8
作者：
Cao Dong-Sheng [1 ,2 ]
Lu Hai [1 ,2 ,3 ]
Chen Dun-Jun [1 ,2 ]
Han Ping [1 ,2 ]
Zhang Rong [1 ,2 ]
Zheng You-Dou [1 ,2 ]
机构：
[1] Nanjing Univ, Nanjing Natl Lab Microstruct, Jiangsu Prov Key Lab Adv Photon & Elect Mat, Nanjing 210093, Peoples R China
[2] Nanjing Univ, Sch Elect Sci & Engn, Nanjing 210093, Peoples R China
[3] Nanjing Electron Devices Inst, Natl Key Lab Monolith Circuits & Modules, Nanjing 210016, Peoples R China
来源：
CHINESE PHYSICS LETTERS | 2011年 / 28卷 / 01期
基金：
中国国家自然科学基金;
关键词：
HIGH BREAKDOWN VOLTAGE; REVERSE-BIAS LEAKAGE; GAN; SIMULATION; HEMT;
D O I：
10.1088/0256-307X/28/1/017303
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
AlGaN/GaN-based planar Schottky barrier diodes with various spacings between ohmic and Schottky contacts are fabricated without any edge termination. The reverse leakage current of the devices quickly saturates at low reverse bias when the two-dimensional electron gas (2DEG) at the AlGaN/GaN interface is fully depleted. The corresponding breakdown voltage is found to follow a linear dependence on contact spacing and exceeds 1100 V at a contact spacing of 20 mu m, yielding a high V-BR(2)/R-ON value of > 280 MW center dot cm(-2). The observations are tentatively explained by a "natural super-junction" theory, in which ionized surface states at front surface of the AlGaN barrier have to be neutralized by reverse surface leakage current from the Schottky electrode.
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页数：4
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