Kinetic pathway of the ferroelectric phase formation in doped HfO2 films

被引：186

作者：

Xu, Lun ^{[1
]}

Nishimura, Tomonori ^{[1
]}

Shibayama, Shigehisa ^{[1
]}

Yajima, Takeaki ^{[1
]}

Migita, Shinji ^{[2
]}

Toriumi, Akira ^{[1
]}

机构：

[1] Univ Tokyo, Dept Mat Engn, Bunkyo Ku, Tokyo 1138656, Japan

[2] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058569, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2017年 / 122卷 / 12期

关键词：

X-RAY-ABSORPTION; ZIRCONIA STABILIZATION; TRANSFORMATION; DOPANTS;

D O I：

10.1063/1.5003918

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The dopant-induced ferroelectric HfO2 formation has been systematically investigated by using cation (Sc, Y, Nb, Al, Si, Ge, and Zr) and anion (N) dopants. Both differences and similarities are discussed among various dopants by focusing on two major factors, the oxygen vacancy (Vo) and the dopant ionic size. First, the doping concentration dependence of the remanent polarization in 27 (+/-2) nm HfO2 films is quantitatively estimated. Then, by comparing the polarization result with the structural transformation in doped HfO2, the pathway of the dopant-induced HfO2 phase transition is discussed among monoclinic, ferroelectric orthorhombic, tetragonal, and cubic phases. Finally, it is addressed that a dopant species independent phase transition route may exist in HfO2 owing to the same kinetic transition process, in which the ferroelectric phase seems to be at an intermediate state between tetragonal and monoclinic phases. Published by AIP Publishing.

引用

页数：7

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