Enhancing the electronic properties of the graphene-based field-effect transistor via chemical doping of KBr (vol 33, pg 12416, 2022)

被引：0
|
作者：
Iqbal, Muhammad Waqas [1 ]
Razzaq, Shazia [1 ]
Noor, N. A. [1 ]
Aftab, Sikandar [2 ]
Afzal, Amir Muhammad [1 ]
Ullah, Hamid [1 ]
Suleman, Muhammad [3 ]
Elahi, Ehsan [4 ,5 ]
机构：
[1] Riphah Int Univ, Dept Phys, Campus Lahore, Lahore, Pakistan
[2] Sejong Univ, Dept Intelligent Mech Engn, Seoul, South Korea
[3] Sejong Univ, Dept Nanotechnol & Adv Mat Engn, 209 Neungdong Ro, Seoul 05006, South Korea
[4] Sejong Univ, Dept Phys & Astron, 209 Neungdong Ro, Seoul 05006, South Korea
[5] Sejong Univ, Graphene Res Inst, 209 Neungdong Ro, Seoul 05006, South Korea
来源：
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2022年 / 33卷 / 17期
关键词：
D O I：
10.1007/s10854-022-08427-y
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：14341 / 14341
页数：1
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