Enhancing the electronic properties of the graphene-based field-effect transistor via chemical doping of KBr (vol 33, pg 12416, 2022)

被引：0

作者：

Iqbal, Muhammad Waqas ^{[1
]}

Razzaq, Shazia ^{[1
]}

Noor, N. A. ^{[1
]}

Aftab, Sikandar ^{[2
]}

Afzal, Amir Muhammad ^{[1
]}

Ullah, Hamid ^{[1
]}

Suleman, Muhammad ^{[3
]}

Elahi, Ehsan ^{[4
,5
]}

机构：

[1] Riphah Int Univ, Dept Phys, Campus Lahore, Lahore, Pakistan

[2] Sejong Univ, Dept Intelligent Mech Engn, Seoul, South Korea

[3] Sejong Univ, Dept Nanotechnol & Adv Mat Engn, 209 Neungdong Ro, Seoul 05006, South Korea

[4] Sejong Univ, Dept Phys & Astron, 209 Neungdong Ro, Seoul 05006, South Korea

[5] Sejong Univ, Graphene Res Inst, 209 Neungdong Ro, Seoul 05006, South Korea

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2022年 / 33卷 / 17期

关键词：

D O I：

10.1007/s10854-022-08427-y

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：14341 / 14341

页数：1

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[1] Enhancing the electronic properties of the graphene-based field-effect transistor via chemical doping of KBr
Iqbal, Muhammad Waqas
Razzaq, Shazia
Noor, N. A.
Aftab, Sikander
Afzal, Amir
Ullah, Hamid
Suleman, Muhammad
Elahi, Ehsan
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2022, 33 (15) : 12416 - 12425
[2] Enhancing the electronic properties of the graphene-based field-effect transistor via chemical doping of KBr
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Shazia Razzaq
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Journal of Materials Science: Materials in Electronics, 2022, 33 : 12416 - 12425
[3] Correction to: Enhancing the electronic properties of the graphene-based field-effect transistor via chemical doping of KBr
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