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- [34] Area-selective post-deposition annealing process using flash lamp and Si photoenergy absorber for metal/high-k gate metal-insulator-semiconductor field-effect transistors with NiSi source/drain JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (4B): : 2939 - 2944
- [35] Area-selective post-deposition annealing process using flash lamp and Si photoenergy absorber for metal/high-k gate metal-insulator-semiconductor field-effect transistors with NiSi source/drain Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2006, 45 (4 B): : 2939 - 2944