Investigation of potassium contamination in SOI wafer using dynamic SIMS

被引：3

作者：

Gui, D. ^{[1
]}

Hua, Y. N. ^{[1
]}

Xing, Z. X. ^{[1
]}

Zhao, S. P. ^{[1
]}

机构：

[1] Chartered Semiconductor Manufacturing Ltd, Singapore 738406, Singapore

来源：

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY | 2007年 / 7卷 / 02期

关键词：

secondary ion mass spectrometry (SIMS); chemical and mechanical polish (CMP); potassium contamination; silicon-on-insulator (SOI); slurry;

D O I：

10.1109/TDMR.2007.901279

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Mobile ions may cause critical failures in integrated circuits. For silicon-on-insulator (SOI) wafers, the mobile ions affect not only the reliability of back end of the line but also the performance of the transistors. This paper presents a case study of potassium (K) contamination in the SOI wafer using dynamic secondary ion mass spectrometry. The results showed that the presence of K in chemical and mechanical polish slurry contaminated the porous interlayer dielectrics (ILD), penetrating below the surface due to their porous structure. The K contamination has been greatly reduced by capping the porous ILD with a high-density-oxide layer.

引用

页码：369 / 372

页数：4

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