Collector Phase Transitions during Vapor-Solid-Solid Nucleation of GaN Nanowires

被引：39

作者：

Cheze, Caroline ^{[1
,2
]}

Geelhaar, Lutz ^{[1
,2
]}

Trampert, Achim ^{[1
]}

Brandt, Oliver ^{[1
]}

Riechert, Henning ^{[1
,2
]}

机构：

[1] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany

[2] Qimonda, D-81730 Munich, Germany

来源：

NANO LETTERS | 2010年 / 10卷 / 09期

关键词：

nanowire; nanocolumn; nucleation; molecular beam epitaxy; nitrides; NI; GROWTH; MECHANISM; EQUILIBRIA; EXPANSION;

D O I：

10.1021/nl101465b

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We investigate the nucleation of Ni-induced GaN nanowires by in situ and ex situ experiments. Three nucleation stages are evidenced. in the first two stages, different crystal structures of the Ni collectors are identified. Real-time monitoring of the Ga desorption allows the amount of Ga incorporated in the collectors to be quantified. A transition of their crystal structure prior to nanowire growth is found to be in agreement with the thermodynamically stable phase sequence of the relevant phase diagrams.

引用

页码：3426 / 3431

页数：6

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