Preparation of SiC-based thermoelectric device by spark plasma sintering

被引:3
作者
Noda, Y [1 ]
Kitagawa, H
Kado, N
Ueda, Y
Kanayama, N
机构
[1] Shimane Univ, Dept Mat Sci, Matsue, Shimane 6908504, Japan
[2] Shimane Univ, Grad Sch Mat Sci, Matsue, Shimane 6908504, Japan
[3] Shimane Inst Ind Technol, Matsue, Shimane 6900816, Japan
来源
FUNCTIONALLY GRADED MATERIALS VII | 2003年 / 423-4卷
关键词
silicon carbide; thermoelectric element; spark plasma sintering; electrode;
D O I
10.4028/www.scientific.net/MSF.423-425.355
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The preparation of SiC-based thermoelectric materials and joining the electrodes were made by Spark Plasma Sintering (SPS). The n- and p-type SiC materials were prepared by the addition Of Si3N4 and Al4C3 as the source materials of N and Al dopants, respectively. The power factor takes the maximum value at the each content of 7wt% Si3N4 or Al4C3. The SiC-thermoelectric material was tentatively joined to MOSi2-based FGM electrodes.
引用
收藏
页码:355 / 358
页数:4
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