A 1-V 5-bit 0.5 GS/s time-based flash ADC in 0.18 μm CMOS technology

被引:4
作者
Fani, Seyed Hamid [1 ]
Rahiminejad, Ehsan [2 ]
机构
[1] Ferdowsi Univ Mashhad, Mashhad, Razavi Khorasan, Iran
[2] Quchan Univ Technol, Quchan, Iran
关键词
Time-based; Analog-to-digital converters; Voltage-to-time converter;
D O I
10.1007/s10470-022-02063-6
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
A novel low-voltage rail-to-rail parallel time-based analog-to-digital converter (ADC) is proposed. The proposed ADC works like a conventional flash ADC except that the process is performed in the time-domain. Since the operation of analog integrated circuits at low supply voltages is limited, converting the voltage signals to the time domain improves the efficiency of the circuit. In this paper, a constant-delay ladder is utilized to make the reference delay-times to compare with the input signal. A 1-V 5-bit 500 MS/s ADC has been designed and simulated in 0.18 mu m CMOS technology consumed 3.66 mW. The simulation results show 0.3lsb and 0.2lsb for INL and DNL respectively. Signal-to-noise and distortion ratio (SNDR) of the proposed ADC is 26.7 dB at Nyquist frequency. The rail-to-rail operation and linearity of the voltage-to-time converter (VTC) improved the efficiency of the ADC comparing to the similar time-based ADCs. The figure-of-merit (FoM) of the ADC is about 0.31 (pJ/conv.step).
引用
收藏
页码:467 / 473
页数:7
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