Topological Insulators Bi2Te3 and Bi2Se3 Grown by MBE on (001) GaAs Substrates

被引：6

作者：

Liu, X. ^{[1
]}

Smith, D. J. ^{[2
]}

Fan, J. ^{[2
,3
]}

Zhang, Y. -H. ^{[3
,4
]}

Cao, H. ^{[5
]}

Chen, Y. P. ^{[5
]}

Kirby, B. J. ^{[6
]}

Sun, N. ^{[1
]}

Ruggiero, S. T. ^{[1
]}

Leiner, J. ^{[1
]}

Pimpinella, R. E. ^{[1
]}

Hagmann, J. ^{[1
]}

Tivakornsasithorn, K. ^{[1
]}

Dobrowolska, M. ^{[1
]}

Furdyna, J. K. ^{[1
]}

机构：

[1] Univ Notre Dame, Dept Phys, Notre Dame, IN 46556 USA

[2] Arizona State Univ, Dept Phys, Tempe, AZ 85287 USA

[3] Arizona State Univ, Ctr Photon Innovat, Tempe, AZ 85287 USA

[4] Arizona State Univ, Sch Elect Comp & Energy Engn, Tempe, AZ 85287 USA

[5] Purdue Univ, Dept Phys, W Lafayette, IN 47907 USA

[6] NIST, Ctr Neutron Res, Gaithersburg, MD 20899 USA

来源：

15TH INTERNATIONAL CONFERENCE ON NARROW GAP SYSTEMS (NGS15) | 2011年 / 1416卷

基金：

美国国家科学基金会;

关键词：

Topological Insulators; MBE; XRD; TEM; Raman; magnetotransport;

D O I：

10.1063/1.3671709

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Bi2Te3, Bi2Se3 and their alloy films were successfully grown by molecular beam epitaxy (MBE) on (001) GaAs substrates. The structural properties of these films were investigated by Reflection high-energy electron diffraction (RHEED), Atomic force microscopy (AFM), X-ray diffraction (XRD), High-resolution transmission electron microscopy (HRTEM) and Raman spectroscopy and mapping. The results indicate that the epitaxial films are highly uniform. High-field and low-temperature magneto-transport measurements on these films are carried out and discussed.

引用

页码：105 / 108

页数：4

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