Analysis of Crosstalk in Single- and Multiwall Carbon Nanotube Interconnects and Its Impact on Gate Oxide Reliability

被引：56
|
作者：
Das, Debaprasad [1 ,2 ]
Rahaman, Hafizur [2 ]
机构：
[1] Meghnad Saha Inst Technol, Dept Elect & Commun Engn, Kolkata 700150, India
[2] Bengal Engn & Sci Univ, Sch VLSI Technol, Sibpur 711102, Howrah, India
来源：
IEEE TRANSACTIONS ON NANOTECHNOLOGY | 2011年 / 10卷 / 06期
关键词：
Average failure rate (AFR); carbon nanotube (CNT); crosstalk; failure-in-time (FIT); gate oxide reliability; multiwall CNT (MWCNT); single-wall CNT (SWCNT); NEXT-GENERATION INTERCONNECTS; DESIGN; MODEL;
D O I：
10.1109/TNANO.2011.2146271
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper analyses the crosstalk effects in carbon nanotube (CNT) interconnect, and its impact on the gate oxide reliability. Using the existing models of CNT, circuit parameters for the single-wall CNT-bundle and multiwall CNT interconnects are calculated and the equivalent circuit has been developed to perform the crosstalk analysis. The crosstalk-induced overshoot/undershoots have been estimated and the impact of the overshoot/undershoots on the gate oxide reliability in terms of failure-in-time rate is calculated. A similar analysis is performed for Cu-based interconnects and comparisons are made with the results obtained for CNT-based interconnect. It has been found that the CNT-based interconnect is more suitable in VLSI circuits as far as the gate oxide reliability is concerned.
引用
收藏
页码：1362 / 1370
页数：9
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