X-band filters utilizing A1N thin film bulk acoustic resonators

被引：24

作者：

Hara, Motoaki ^{[1
]}

Yokoyama, Tsuyoshi ^{[1
]}

Ueda, Masanori ^{[1
]}

Satoh, Yoshio ^{[1
]}

机构：

[1] Fujitsu Ltd, Akashi, Hyogo, Japan

来源：

2007 IEEE ULTRASONICS SYMPOSIUM PROCEEDINGS, VOLS 1-6 | 2007年

关键词：

FBAR; filter; X-band; A1N; air gap;

D O I：

10.1109/ULTSYM.2007.291

中图分类号：

O42 [声学];

学科分类号：

070206 ; 082403 ;

摘要：

A filter with aluminum nitride thin-film bulk acoustic resonators (FBAR) for the X-band was developed. The FBAR has an air gap beneath the resonator to isolate acoustically from a substrate, and is extremely thin to operate in the X-band. The FBAR has two structural features - a sacrificial layer to make the air gap was very thin in order to prevent the resonator from cracking on the edge of the air gap, and a resonator was deformed to dome shape by stresses of the films to keep the air gap. The fabricated FBAR operated successfully with a k(eff)(2) of 6.40%, a resonance Q of 246, and anti-resonance Q of 462. The fabricated filter had a center frequency of 9.07 GHz, a fractional bandwidth of 3.1%, a minimum insertion loss of -1.7 dB, and an out-of-band rejection of -21 dB.

引用

页码：1152 / 1155

页数：4

共 9 条

[1] FUNDAMENTAL-MODE VHF-UHF MINIATURE ACOUSTIC RESONATORS AND FILTERS ON SILICON [J].