Photoresponse of n-ZnO/p-SiC heterojunction diodes grown by plasma-assisted molecular-beam epitaxy -: art. no. 241108

被引：143

作者：

Alivov, YI ^{[1
]}

Özgür, Ü ^{[1
]}

Dogan, S ^{[1
]}

Johnstone, D ^{[1
]}

Avrutin, V ^{[1
]}

Onojima, N ^{[1
]}

Liu, C ^{[1
]}

Xie, J ^{[1
]}

Fan, Q ^{[1
]}

Morkoç, H ^{[1
]}

机构：

[1] Virginia Commonwealth Univ, Dept Elect Engn, Richmond, VA 23284 USA

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 24期

关键词：

D O I：

10.1063/1.1949730

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High quality n-ZnO films on commercial p-type 6H-SiC substrates have been grown by plasma-assisted molecular-beam epitaxy, and n-ZnO/p-SiC heterojunction mesa structures have been fabricated. Current-voltage characteristics of the structures had a very good rectifying diode-like behavior with a leakage current less than 2x10(-4) A/cm(2) at -10 V, a breakdown voltage greater than 20 V, a forward turn on voltage of similar to 5 V, and a forward current of 2 A/cm(2) at 8 V. Photosensitivity of the diodes was studied at room temperature and a photoresponsivity of as high as 0.045 A/W at -7.5 V reverse bias was observed for photon energies higher than 3.0 eV. (c) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

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