Exploring Waveguiding Properties of Heavily Doped Yb3+:KLu(WO4)2 Epitaxial Layers

被引：7

作者：

Bolanos, Western ^{[1
]}

Carvajal, Joan J. ^{[1
]}

Mateos, Xavier ^{[1
]}

Aguilo, Magdalena ^{[1
]}

Diaz, Francesc ^{[1
]}

机构：

[1] URV, Fis & Cristal Iog Mat & Nanomat FiCMA FiCNA, Tarragona 43007, Spain

来源：

IEEE PHOTONICS JOURNAL | 2010年 / 2卷 / 03期

关键词：

Epitaxial growth; dielectric films; optical planar waveguides; LASER OPERATION; CRYSTAL-GROWTH; KLU(WO4)(2); COMPOSITES;

D O I：

10.1109/JPHOT.2010.2050580

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-quality epitaxial layers of heavily doped Yb:KLu(WO4)(2) grown on KLu(WO4)(2) substrates by liquid phase epitaxy were characterized in terms of lattice mismatch and refractive indexes of the layer and the substrate. The effective refractive indexes of the guided modes that these structures can support were modeled and measured experimentally for the transverse electric (TE) and transverse magnetic (TM) mode excitation by dark m-lines spectroscopy. The upper limit for optical losses in these waveguides corresponding only to scattering processes was estimated to be similar to 1.5 dB/cm at lambda = 632: 8 nm. These results show that, apart for highly efficient thin-disk laser applications, these epilayers can be used as waveguide devices at wavelengths different from those used to excite Yb3+.

引用

页码：482 / 489

页数：8

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