2D Model for moisture diffusion in integrated Low-k dielectrics

被引：1

作者：

Mischler, Leo ^{[1
,2
]}

Cartailler, Vivien ^{[1
]}

Duchamp, Genevieve ^{[2
]}

Fremont, Helene ^{[2
]}

Imbert, Gregory ^{[1
]}

Moulard, J. B. ^{[1
]}

Kermarrec, Olivier ^{[1
]}

机构：

[1] Univ Bordeaux, STMicroelect, Bordeaux, France

[2] Univ Bordeaux, Crolles & Lab IMS, Bordeaux, France

来源：

2022 23RD INTERNATIONAL CONFERENCE ON THERMAL, MECHANICAL AND MULTI-PHYSICS SIMULATION AND EXPERIMENTS IN MICROELECTRONICS AND MICROSYSTEMS (EUROSIME) | 2022年

关键词：

D O I：

10.1109/EuroSimE54907.2022.9758882

中图分类号：

Q6 [生物物理学];

学科分类号：

071011 ;

摘要：

This work presents a study of moisture diffusion inside integrated circuits. The targeted materials are low-k and SiCN dielectrics. Moisture diffusion in these two materials is studied through mass variations. In an integrated configuration, moisture penetration is monitored by capacitance variations. A 2D numerical simulation approach is presented to model the capacitance results using the bulk material properties as inputs.

引用

页数：6

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