Activation and distribution of silicon implanted in gallium arsenide as a result of isothermal radiation annealing

The method of capacitance- voltage characteristics is used to investigate the concentration profiles n( x) of Si-28, implanted in GaAs [E = 50 and 75 keV, F = (1.88-6.25) x 10(12) cm-(2)] after "photonic'' and "electronic'' annealing with a protective dielectric coating covering the surface and without it. It is shown that in contrast to thermal annealing (800 degrees C, 30 min), after photonic and electronic annealing diffusive redistribution of silicon into the interior of the GaAs sample is observed. The diffusion coefficient D and degree of activation eta increase as the temperature is increased in the case of photonic annealing and as the power is increased in the case of electronic annealing. The values of the activation energy of the processes for D and eta for radiation annealing (photonic and electron) are lower than the corresponding values for thermal annealing. The values of D and eta after photonic and electronic annealing without the protective dielectric coating are higher than with it. (C) 1998 American Institute of Physics. [S1063-7826(98)00110-0].